IRFS52N15DTRRP Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 51A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис IRFS52N15DTRRP Infineon Technologies
Description: MOSFET N-CH 150V 51A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 230W (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції IRFS52N15DTRRP
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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IRFS52N15DTRRP | Infineon Technologies |
Description: MOSFET N-CH 150V 51A D2PAK Current - Continuous Drain (Id) @ 25°C: 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.8W (Ta), 230W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFS52N15DTRRP | Infineon Technologies |
MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. |
 |
IRFS52N15DTRRP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| IRFS52N15DTRRP |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 51A D2PAK
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Description: MOSFET N-CH 150V 51A D2PAK
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
товару немає в наявності
В кошику
од. на суму грн.
| IRFS52N15DTRRP |
|
Виробник: Infineon Technologies
MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC
MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| IRFS52N15DTRRP |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.