IRFS7434PBF

IRFS7434PBF Infineon / IR


irfs7434pbf-1228292.pdf Виробник: Infineon / IR
MOSFET 40V StrongIRFET 195A,1.6mOhm,216nC
на замовлення 126 шт:

термін постачання 21-30 дні (днів)
Відгуки про товар
Написати відгук

Технічний опис IRFS7434PBF Infineon / IR

Description: MOSFET N-CH 40V 195A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 294W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 250µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V.

Інші пропозиції IRFS7434PBF

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IRFS7434PBF IRFS7434PBF Виробник : Infineon Technologies irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
товар відсутній
IRFS7434PBF IRFS7434PBF Виробник : International Rectifier IRSD-S-A0000175438-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
товар відсутній