IRFS7437PBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис IRFS7437PBF Infineon Technologies
Description: MOSFET N CH 40V 195A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 3.9V @ 150µA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції IRFS7437PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IRFS7437PBF | Infineon / IR |
MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, D2-Pak |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFS7437PBF |
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Виробник: Infineon / IR
MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, D2-Pak
MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, D2-Pak
товару немає в наявності
В кошику
од. на суму грн.



