Технічний опис IRFS7534-7PPBF Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: D2PAK (7-Lead), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 290W (Tc), Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tube.
Інші пропозиції IRFS7534-7PPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFS7534-7PPBF | Infineon Technologies |
 Description: MOSFET N CH 60V 240A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK (7-Lead) Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tube |
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В кошику од. на суму грн. |
| IRFS75347PPBF | Infineon Technologies |
Description: HEXFET POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: D2PAK (7-Lead) Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFS7534-7PPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
Description: MOSFET N CH 60V 240A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRFS75347PPBF |
|
Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tube
Description: HEXFET POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.