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Технічний опис IRFS7730PBF Infineon / IR
Description: MOSFET N-CH 75V 195A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: TO-263AB (D2PAK), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції IRFS7730PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IRFS7730PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 195A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: TO-263AB (D2PAK) Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
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| IRFS7730PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 75V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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