Технічний опис IRFS7762PBF Infineon / IR
Description: MOSFET N-CH 75V 85A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 51A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 100µA, Supplier Device Package: TO-263AB (D2PAK), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V.
Інші пропозиції IRFS7762PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRFS7762PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK Tube |
товару немає в наявності |
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IRFS7762PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 75V 85A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-263AB (D2PAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V |
товару немає в наявності |