Технічний опис IRFSL4321PBF IR
Description: MOSFET N-CH 150V 85A TO262, Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 350W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Інші пропозиції IRFSL4321PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFSL4321PBF | Infineon Technologies |
 Description: MOSFET N-CH 150V 85A TO262Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFSL4321PBF | Infineon Technologies |
MOSFETs MOSFT 150V 83A 15mOhm 71nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFSL4321PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 85A TO262
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 150V 85A TO262
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRFSL4321PBF |
|
Виробник: Infineon Technologies
MOSFETs MOSFT 150V 83A 15mOhm 71nC
MOSFETs MOSFT 150V 83A 15mOhm 71nC
товару немає в наявності
В кошику
од. на суму грн.