IRFSL4410ZPBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 212.97 грн |
| 10+ | 176.27 грн |
| 25+ | 144.92 грн |
| 100+ | 124.71 грн |
| 250+ | 117.05 грн |
| 500+ | 110.78 грн |
| 1000+ | 93.36 грн |
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Технічний опис IRFSL4410ZPBF Infineon Technologies
Description: MOSFET N-CH 100V 97A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-262, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Інші пропозиції IRFSL4410ZPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRFSL4410ZPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 97A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-262 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
товару немає в наявності |
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IRFSL4410ZPBF | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262 Kind of package: tube Drain current: 97A Power dissipation: 230W Drain-source voltage: 100V Type of transistor: N-MOSFET Mounting: THT Technology: HEXFET® Kind of channel: enhancement Polarisation: unipolar Case: TO262 |
товару немає в наявності |


