IRFSL7440PBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 4+ | 87.98 грн |
| 10+ | 72.75 грн |
| 100+ | 48.88 грн |
| 250+ | 48.67 грн |
| 500+ | 47.13 грн |
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Технічний опис IRFSL7440PBF Infineon Technologies
Description: MOSFET N CH 40V 120A TO-262, Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 3.9V @ 100µA, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.
Інші пропозиції IRFSL7440PBF за ціною від 51.92 грн до 120.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IRFSL7440PBF | Infineon Technologies |
 Description: MOSFET N CH 40V 120A TO-262Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 3.9V @ 100µA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| IRFSL7440PBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 40V 120A TO-262
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Description: MOSFET N CH 40V 120A TO-262
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 120.98 грн |
| 10+ | 96.83 грн |
| 100+ | 77.06 грн |
| 500+ | 61.20 грн |
| 1000+ | 51.92 грн |