IRFSL7530PBF Infineon Technologies

Description: MOSFET N-CH 60V 195A TO262, Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.