| Кількість | Ціна |
|---|---|
| 5+ | 76.52 грн |
| 10+ | 68.05 грн |
| 100+ | 46.14 грн |
| 500+ | 38.12 грн |
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Технічний опис IRFU220BTU-AM002 onsemi / Fairchild
Description: MOSFET N-CH 200V 4.6A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції IRFU220BTU-AM002
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRFU220BTU-AM002 | Виробник : onsemi |
 Description: MOSFET N-CH 200V 4.6A IPAKInput Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |