IRFU220NPBF Infineon Technologies

Description: MOSFET N-CH 200V 5A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 43W (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: IPAK (TO-251AA).