IRFU2607ZPBF

IRFU2607ZPBF Infineon Technologies


irfr2607zpbf.pdf?fileId=5546d462533600a401535630d6e42083
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A IPAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Технічний опис IRFU2607ZPBF Infineon Technologies

Description: MOSFET N-CH 75V 42A IPAK, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: IPAK (TO-251AA), Vgs(th) (Max) @ Id: 4V @ 50µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA.

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IRFU2607ZPBF IRFU2607ZPBF Виробник : Infineon / IR international rectifier_irfr2607zpbf-1169121.pdf MOSFET MOSFT 75V 45A 22mOhm 34nC Qg
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