| Кількість | Ціна |
|---|---|
| 3+ | 145.50 грн |
| 10+ | 129.00 грн |
| 100+ | 89.18 грн |
| 500+ | 73.16 грн |
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Технічний опис IRFU7740PBF Infineon / IR
Description: MOSFET N-CH 75V 87A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 100µA, Supplier Device Package: IPAK (TO-251AA), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V.
Інші пропозиції IRFU7740PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRFU7740PBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 75V 87A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: IPAK (TO-251AA) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V |
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