Технічний опис IRFZ44NSPBF
- MOSFET, N, 55V, 49A, D2-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:55V
- Cont Current Id:49A
- On State Resistance:0.022ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:D2-PAK
- Termination Type:SMD
- Alternate Case Style:D2-PAK
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Junction to Case Thermal Resistance A:1.4`C/W
- Max Voltage Vds:55V
- Max Voltage Vgs th:4V
- Power Dissipation:110W
- Power Dissipation Pd:110W
- Power Dissipation on 1 Sq. PCB:3.8W
- Pulse Current Idm:160A
- Voltage Vds:55V
- Transistor Case Style:D2-PAK
Інші пропозиції IRFZ44NSPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFZ44NSPBF | Infineon Technologies |
  Description: MOSFET N-CH 55V 49A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFZ44NSPBF | Infineon Technologies |
MOSFET 60V 1 N-CH HEXFET 17.5mOhms 16.7nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFZ44NSPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFZ44NSPBF |
|
Виробник: Infineon Technologies
MOSFET 60V 1 N-CH HEXFET 17.5mOhms 16.7nC
MOSFET 60V 1 N-CH HEXFET 17.5mOhms 16.7nC
товару немає в наявності
В кошику
од. на суму грн.