IRG4BC10SD-LPBF International Rectifier


IRG4BC10SD-SPbF,LPbF.pdf
Виробник: International Rectifier
IGBT N-CH W/DIO 600V 14.0A TO262 Транзистори
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Технічний опис IRG4BC10SD-LPBF International Rectifier

Description: IGBT 600V 14A 38W TO262, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A, Reverse Recovery Time (trr): 28 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube, Power - Max: 38 W, Current - Collector Pulsed (Icm): 18 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 14 A, Part Status: Obsolete, Gate Charge: 15 nC, Test Condition: 480V, 8A, 100Ohm, 15V, Switching Energy: 310µJ (on), 3.28mJ (off), Td (on/off) @ 25°C: 76ns/815ns, Supplier Device Package: TO-262.

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IRG4BC10SD-LPBF IRG4BC10SD-LPBF Infineon Technologies IRG4BC10SD-SPbF,LPbF.pdf Description: IGBT 600V 14A 38W TO262
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 310µJ (on), 3.28mJ (off)
Td (on/off) @ 25°C: 76ns/815ns
Supplier Device Package: TO-262
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IRG4BC10SD-LPBF IRG4BC10SD-LPBF Infineon / IR irg4bc10sd-s-1169503.pdf IGBT Transistors 600V DC-1kHz
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IRG4BC10SD-LPBF IRG4BC10SD-SPbF,LPbF.pdf
Виробник: Infineon Technologies
Description: IGBT 600V 14A 38W TO262
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 310µJ (on), 3.28mJ (off)
Td (on/off) @ 25°C: 76ns/815ns
Supplier Device Package: TO-262
товару немає в наявності
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IRG4BC10SD-LPBF irg4bc10sd-s-1169503.pdf
Виробник: Infineon / IR
IGBT Transistors 600V DC-1kHz
товару немає в наявності
В кошику  од. на суму  грн.