IRG4BC10SD-SPBF International Rectifier
Виробник: International RectifierDescription: IGBT 600V 14A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 219+ | 100.32 грн |
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Технічний опис IRG4BC10SD-SPBF International Rectifier
Description: IGBT 600V 14A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 28 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 76ns/815ns, Switching Energy: 310µJ (on), 3.28mJ (off), Test Condition: 480V, 8A, 100Ohm, 15V, Gate Charge: 15 nC, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 38 W.
Інші пропозиції IRG4BC10SD-SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRG4BC10SD-SPBF | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2+Tab) D2PAK Tube |
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IRG4BC10SD-SPBF | Виробник : Infineon Technologies |
Description: IGBT 600V 14A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 76ns/815ns Switching Energy: 310µJ (on), 3.28mJ (off) Test Condition: 480V, 8A, 100Ohm, 15V Gate Charge: 15 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 38 W |
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IRG4BC10SD-SPBF | Виробник : Infineon Technologies |
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