Технічний опис IRG4BC30F
- IGBT, TO-220
- Transistor Type:IGBT
- Transistor Polarity:N
- Max Current Ic Continuous a:31A
- Max Voltage Vce Sat:1.9V
- Power Dissipation:100W
- Case Style:TO-220
- Collector-to-Emitter Breakdown Voltage:600V
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Fall Time:180ns
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation Pd:100W
- Pulsed Current Icm:120A
- Rise Time:15ns
Інші пропозиції IRG4BC30F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRG4BC30F | Виробник : Infineon Technologies |
 Description: IGBT 600V 31A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 21ns/200ns Switching Energy: 230µJ (on), 1.18mJ (off) Test Condition: 480V, 17A, 23Ohm, 15V Gate Charge: 51 nC Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 100 W |
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