IRG4PSH71KDPBF

IRG4PSH71KDPBF International Rectifier


irg4psh71kdpbf.pdf?fileId=5546d462533600a401535648a9f22337 Виробник: International Rectifier
Description: IRG4PSH71 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 67ns/230ns
Switching Energy: 5.68mJ (on), 3.23mJ (off)
Test Condition: 800V, 42A, 5Ohm, 15V
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 156 A
Power - Max: 350 W
на замовлення 81 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
31+642.31 грн
Мінімальне замовлення: 31
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Технічний опис IRG4PSH71KDPBF International Rectifier

Description: IRG4PSH71 - DISCRETE IGBT WITH A, Packaging: Bulk, Package / Case: TO-274AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 107 ns, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A, Supplier Device Package: SUPER-247™ (TO-274AA), Td (on/off) @ 25°C: 67ns/230ns, Switching Energy: 5.68mJ (on), 3.23mJ (off), Test Condition: 800V, 42A, 5Ohm, 15V, Gate Charge: 410 nC, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 156 A, Power - Max: 350 W.

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IRG4PSH71KDPBF IRG4PSH71KDPBF Виробник : Infineon Technologies irg4psh71kdpbf.pdf Trans IGBT Chip N-CH 1200V 78A 350000mW 3-Pin(3+Tab) TO-274AA Tube
товар відсутній
IRG4PSH71KDPBF IRG4PSH71KDPBF Виробник : INFINEON TECHNOLOGIES irg4psh71kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
IRG4PSH71KDPBF IRG4PSH71KDPBF Виробник : Infineon Technologies irg4psh71kdpbf.pdf?fileId=5546d462533600a401535648a9f22337 Description: IGBT 1200V 78A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 67ns/230ns
Switching Energy: 5.68mJ (on), 3.23mJ (off)
Test Condition: 800V, 42A, 5Ohm, 15V
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 156 A
Power - Max: 350 W
товар відсутній
IRG4PSH71KDPBF IRG4PSH71KDPBF Виробник : Infineon / IR irg4psh71kdpbf-1732940.pdf IGBT Transistors 1200V UltraFast 4-20kHz
товар відсутній
IRG4PSH71KDPBF IRG4PSH71KDPBF Виробник : INFINEON TECHNOLOGIES irg4psh71kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній