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Технічний опис IRG4PSH71UDPBF
- IGBT, TO-274AA
- Transistor Type:IGBT
- Transistor Polarity:N
- Voltage Vces:1200V
- Max Current Ic Continuous a:50A
- Max Voltage Vce Sat:2.7V
- Power Dissipation:350W
- Case Style:TO-247AA
- Termination Type:Through Hole
- Collector-to-Emitter Breakdown Voltage:1200V
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation Pd:350W
- Pulsed Current Icm:200A
- Rise Time:77ns
Інші пропозиції IRG4PSH71UDPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRG4PSH71UDPBF | International Rectifier |
  (TO-247AA) Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRG4PSH71UDPBF | Infineon Technologies |
Description: IGBT 1200V 99A SUPER-247 Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A Supplier Device Package: SUPER-247™ (TO-274AA) Td (on/off) @ 25°C: 46ns/250ns Switching Energy: 8.8mJ (on), 9.4mJ (off) Test Condition: 960V, 70A, 5Ohm, 15V Gate Charge: 380 nC Current - Collector (Ic) (Max): 99 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 350 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRG4PSH71UDPBF | Infineon Technologies |
IGBTs 1200V UltraFast 4-20kHz |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRG4PSH71UDPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 99A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. |
| IRG4PSH71UDPBF |
|
Виробник: International Rectifier
(TO-247AA) Транзистори
(TO-247AA) Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRG4PSH71UDPBF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V 99A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 46ns/250ns
Switching Energy: 8.8mJ (on), 9.4mJ (off)
Test Condition: 960V, 70A, 5Ohm, 15V
Gate Charge: 380 nC
Current - Collector (Ic) (Max): 99 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
Description: IGBT 1200V 99A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 46ns/250ns
Switching Energy: 8.8mJ (on), 9.4mJ (off)
Test Condition: 960V, 70A, 5Ohm, 15V
Gate Charge: 380 nC
Current - Collector (Ic) (Max): 99 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
товару немає в наявності
В кошику
од. на суму грн.
| IRG4PSH71UDPBF |
|
Виробник: Infineon Technologies
IGBTs 1200V UltraFast 4-20kHz
IGBTs 1200V UltraFast 4-20kHz
товару немає в наявності
В кошику
од. на суму грн.
| IRG4PSH71UDPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.