Технічний опис IRG4PSH71UDPBF
- IGBT, TO-274AA
- Transistor Type:IGBT
- Transistor Polarity:N
- Voltage Vces:1200V
- Max Current Ic Continuous a:50A
- Max Voltage Vce Sat:2.7V
- Power Dissipation:350W
- Case Style:TO-247AA
- Termination Type:Through Hole
- Collector-to-Emitter Breakdown Voltage:1200V
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation Pd:350W
- Pulsed Current Icm:200A
- Rise Time:77ns
Інші пропозиції IRG4PSH71UDPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRG4PSH71UDPBF | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 1200V 99A 350000mW 3-Pin(3+Tab) TO-274AA Tube |
товару немає в наявності |
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IRG4PSH71UDPBF | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 99A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товару немає в наявності |
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IRG4PSH71UDPBF | Виробник : Infineon Technologies |
Description: IGBT 1200V 99A SUPER247 Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A Supplier Device Package: SUPER-247™ (TO-274AA) Td (on/off) @ 25°C: 46ns/250ns Switching Energy: 8.8mJ (on), 9.4mJ (off) Test Condition: 960V, 70A, 5Ohm, 15V Gate Charge: 380 nC Current - Collector (Ic) (Max): 99 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 350 W |
товару немає в наявності |
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IRG4PSH71UDPBF | Виробник : Infineon Technologies |
IGBTs 1200V UltraFast 4-20kHz |
товару немає в наявності |
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IRG4PSH71UDPBF | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 99A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |