Технічний опис IRG4PSH71UPBF Infineon Technologies
Description: IGBT 1200V 99A 350W SUPER247, Packaging: Bag, Package / Case: TO-274AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A, Supplier Device Package: SUPER-247™ (TO-274AA), Td (on/off) @ 25°C: 51ns/280ns, Switching Energy: 4.77mJ (on), 9.54mJ (off), Test Condition: 960V, 70A, 5Ohm, 15V, Gate Charge: 370 nC, Current - Collector (Ic) (Max): 99 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 350 W.
Інші пропозиції IRG4PSH71UPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRG4PSH71UPBF | Виробник : Infineon Technologies |
 Description: IGBT 1200V 99A 350W SUPER247Packaging: Bag Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A Supplier Device Package: SUPER-247™ (TO-274AA) Td (on/off) @ 25°C: 51ns/280ns Switching Energy: 4.77mJ (on), 9.54mJ (off) Test Condition: 960V, 70A, 5Ohm, 15V Gate Charge: 370 nC Current - Collector (Ic) (Max): 99 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 350 W |
товару немає в наявності |
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IRG4PSH71UPBF | Виробник : Infineon / IR |
IGBT Transistors 1200V UltraFast 8-40kHz |
товару немає в наявності |