IRG4RC10SDPBF Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT 600V 14A TO-252AA
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Part Status: Obsolete
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 310µJ (on), 3.28mJ (off)
Td (on/off) @ 25°C: 76ns/815ns
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Collector (Ic) (Max): 14 A
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Технічний опис IRG4RC10SDPBF Infineon Technologies
Description: IGBT 600V 14A TO-252AA, Power - Max: 38 W, Current - Collector Pulsed (Icm): 18 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Part Status: Obsolete, Gate Charge: 15 nC, Test Condition: 480V, 8A, 100Ohm, 15V, Switching Energy: 310µJ (on), 3.28mJ (off), Td (on/off) @ 25°C: 76ns/815ns, Supplier Device Package: TO-252AA (DPAK), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A, Reverse Recovery Time (trr): 28 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Current - Collector (Ic) (Max): 14 A.
Інші пропозиції IRG4RC10SDPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRG4RC10SDPBF | Виробник : Infineon Technologies |
IGBT Transistors 600V DC-1 KHZ (STD) COPACK IGBT |
товару немає в наявності |