Технічний опис IRG4RC10SPBF IR - ASA only Supplier
Description: IGBT 600V 14A TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A, Supplier Device Package: TO-252AA (DPAK), Td (on/off) @ 25°C: 25ns/630ns, Switching Energy: 140µJ (on), 2.58mJ (off), Test Condition: 480V, 8A, 100Ohm, 15V, Gate Charge: 15 nC, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 38 W.
Інші пропозиції IRG4RC10SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRG4RC10SPBF | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2+Tab) DPAK |
товару немає в наявності |
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IRG4RC10SPBF | Виробник : Infineon Technologies |
Description: IGBT 600V 14A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A Supplier Device Package: TO-252AA (DPAK) Td (on/off) @ 25°C: 25ns/630ns Switching Energy: 140µJ (on), 2.58mJ (off) Test Condition: 480V, 8A, 100Ohm, 15V Gate Charge: 15 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 38 W |
товару немає в наявності |
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IRG4RC10SPBF | Виробник : Infineon / IR |
IGBT Transistors 600V DC-1kHz |
товару немає в наявності |