Відгуки про товар
Написати відгук
Інші пропозиції IRG7PH30K10PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
IRG7PH30K10PBF | Infineon Technologies |
Description: IGBT 1200V 33A 210W TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A Supplier Device Package: TO-247AC IGBT Type: Trench Td (on/off) @ 25°C: 14ns/110ns Switching Energy: 530µJ (on), 380µJ (off) Test Condition: 600V, 9A, 22Ohm, 15V Gate Charge: 45 nC Part Status: Obsolete Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 27 A Power - Max: 210 W |
товару немає в наявності |
В кошику од. на суму грн. |
|
IRG7PH30K10PBF | Infineon / IR |
IGBT Transistors Trnch IGBT 1200V 10A single IGBT |
товару немає в наявності |
В кошику од. на суму грн. |
| IRG7PH30K10PBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 1200V 33A 210W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/110ns
Switching Energy: 530µJ (on), 380µJ (off)
Test Condition: 600V, 9A, 22Ohm, 15V
Gate Charge: 45 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 210 W
Description: IGBT 1200V 33A 210W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/110ns
Switching Energy: 530µJ (on), 380µJ (off)
Test Condition: 600V, 9A, 22Ohm, 15V
Gate Charge: 45 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 210 W
товару немає в наявності
В кошику
од. на суму грн.
| IRG7PH30K10PBF |
![]() |
Виробник: Infineon / IR
IGBT Transistors Trnch IGBT 1200V 10A single IGBT
IGBT Transistors Trnch IGBT 1200V 10A single IGBT
товару немає в наявності
В кошику
од. на суму грн.




