IRG7PSH50UDPBF

IRG7PSH50UDPBF International Rectifier


IRSDS11610-1.pdf?t.download=true&u=5oefqw Виробник: International Rectifier
Description: IRG7PSH50 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO274-3-903
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 462 W
на замовлення 157 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
36+554.02 грн
Мінімальне замовлення: 36
Відгуки про товар
Написати відгук

Технічний опис IRG7PSH50UDPBF International Rectifier

Description: IRG7PSH50 - DISCRETE IGBT WITH A, Packaging: Bulk, Package / Case: TO-274AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 190 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: PG-TO274-3-903, IGBT Type: Trench, Td (on/off) @ 25°C: 35ns/430ns, Switching Energy: 3.6mJ (on), 2.2mJ (off), Test Condition: 600V, 50A, 5Ohm, 15V, Gate Charge: 440 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 116 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 462 W.

Інші пропозиції IRG7PSH50UDPBF

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IRG7PSH50UDPBF IRG7PSH50UDPBF Виробник : Infineon Technologies irg7psh50udpbf.pdf Trans IGBT Chip N-CH 1200V 116A 462000mW 3-Pin(3+Tab) Super-247 Tube
товар відсутній
IRG7PSH50UDPBF IRG7PSH50UDPBF Виробник : Infineon Technologies IRG7PSH50UDPbF.pdf Description: IGBT TRENCH 1200V 116A TO274
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO274-3-903
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 462 W
товар відсутній
IRG7PSH50UDPBF IRG7PSH50UDPBF Виробник : Infineon / IR irg7psh50udpbf-1302968.pdf IGBT Transistors IGBT DISCRETES
товар відсутній