Технічний опис IRGB10B60KDPBF Infineon Technologies
Description: IGBT NPT 600V 22A TO-220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 30ns/230ns, Switching Energy: 140µJ (on), 250µJ (off), Test Condition: 400V, 10A, 47Ohm, 15V, Gate Charge: 38 nC, Current - Collector (Ic) (Max): 22 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 44 A, Power - Max: 156 W.
Інші пропозиції IRGB10B60KDPBF
| Фото | Назва | Виробник | Інформація |
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IRGB10B60KDPBF | Виробник : Infineon Technologies |
 Description: IGBT NPT 600V 22A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A Supplier Device Package: TO-220AB IGBT Type: NPT Td (on/off) @ 25°C: 30ns/230ns Switching Energy: 140µJ (on), 250µJ (off) Test Condition: 400V, 10A, 47Ohm, 15V Gate Charge: 38 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 44 A Power - Max: 156 W |
товару немає в наявності |
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IRGB10B60KDPBF | Виробник : Infineon Technologies |
IGBT Transistors 600V UltraFast 10-30kHz |
товару немає в наявності |