Технічний опис IRGB15B60KDPBF Infineon Technologies
Description: IGBT 600V 31A 208W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 92 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 34ns/184ns, Switching Energy: 220µJ (on), 340µJ (off), Test Condition: 400V, 15A, 22Ohm, 15V, Gate Charge: 56 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 31 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 62 A, Power - Max: 208 W.
Інші пропозиції IRGB15B60KDPBF
| Фото | Назва | Виробник | Інформація |
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IRGB15B60KDPBF | Виробник : Infineon Technologies |
 Description: IGBT 600V 31A 208W TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Supplier Device Package: TO-220AB IGBT Type: NPT Td (on/off) @ 25°C: 34ns/184ns Switching Energy: 220µJ (on), 340µJ (off) Test Condition: 400V, 15A, 22Ohm, 15V Gate Charge: 56 nC Part Status: Obsolete Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 62 A Power - Max: 208 W |
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IRGB15B60KDPBF | Виробник : Infineon Technologies |
IGBT Transistors 600V UltraFast 10-30kHz |
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IRGB15B60KDPBF | Виробник : Infineon (IRF) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 31A; 139W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 31A Power dissipation: 139W Case: TO220AB Mounting: THT Kind of package: tube |
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