Технічний опис IRGB5B120KDPBF Infineon Technologies
Description: IGBT 1200V 12A 89W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 160 ns, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/100ns, Switching Energy: 390µJ (on), 330µJ (off), Test Condition: 600V, 6A, 50Ohm, 15V, Gate Charge: 25 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 89 W.
Інші пропозиції IRGB5B120KDPBF
| Фото | Назва | Виробник | Інформація |
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IRGB5B120KDPBF | Виробник : Infineon Technologies |
 Description: IGBT 1200V 12A 89W TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 160 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6A Supplier Device Package: TO-220AB IGBT Type: NPT Td (on/off) @ 25°C: 22ns/100ns Switching Energy: 390µJ (on), 330µJ (off) Test Condition: 600V, 6A, 50Ohm, 15V Gate Charge: 25 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 24 A Power - Max: 89 W |
товару немає в наявності |
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IRGB5B120KDPBF | Виробник : Infineon / IR |
IGBT Transistors 1200V UltraFast 10-30kHz |
товару немає в наявності |