Технічний опис IRGB8B60KPBF Infineon Technologies
Description: IGBT 600V 28A 167W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/140ns, Switching Energy: 160µJ (on), 160µJ (off), Test Condition: 400V, 5A, 100Ohm, 15V, Gate Charge: 18.2 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 26 A, Power - Max: 167 W.
Інші пропозиції IRGB8B60KPBF
| Фото | Назва | Виробник | Інформація |
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IRGB8B60KPBF | Виробник : Infineon Technologies |
 Description: IGBT 600V 28A 167W TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A Supplier Device Package: TO-220AB IGBT Type: NPT Td (on/off) @ 25°C: 23ns/140ns Switching Energy: 160µJ (on), 160µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 167 W |
товару немає в наявності |
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IRGB8B60KPBF | Виробник : Infineon / IR |
IGBT Transistors 600V UltraFast 10-30kHz |
товару немає в наявності |