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IRGB8B60KPBF

IRGB8B60KPBF Infineon Technologies

irgs8b60kpbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 28A 167000mW 3-Pin(3+Tab) TO-220AB Tube
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Технічний опис IRGB8B60KPBF Infineon Technologies

Description: IGBT 600V 28A 167W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/140ns, Switching Energy: 160µJ (on), 160µJ (off), Test Condition: 400V, 5A, 100Ohm, 15V, Gate Charge: 18.2 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 26 A, Power - Max: 167 W.

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IRGB8B60KPBF IRGB8B60KPBF Виробник : Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 28A 167W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 167 W
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IRGB8B60KPBF IRGB8B60KPBF Виробник : Infineon / IR Part_Number_Guide_Web.pdf IGBT Transistors 600V UltraFast 10-30kHz
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