IRGIB10B60KD1P Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT NPT 600V 16A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 156µJ (on), 165µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 41 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 44 W
на замовлення 14100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 176+ | 130.27 грн |
Відгуки про товар
Написати відгук
Технічний опис IRGIB10B60KD1P Infineon Technologies
Description: IGBT NPT 600V 16A TO220AB FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 79 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A, Supplier Device Package: TO-220AB Full-Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/180ns, Switching Energy: 156µJ (on), 165µJ (off), Test Condition: 400V, 10A, 50Ohm, 15V, Gate Charge: 41 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 32 A, Power - Max: 44 W.
Інші пропозиції IRGIB10B60KD1P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRGIB10B60KD1P | Виробник : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRGIB10B60KD1P - IRGIB10B601 DISCRETE IGBT WITH ANTI-PAR tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
на замовлення 138 шт: термін постачання 21-31 дні (днів) |
|
 |
IRGIB10B60KD1P | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 600V 16A 44000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube |
товару немає в наявності |
|
|
|
IRGIB10B60KD1P | Виробник : Infineon Technologies |
Description: IGBT NPT 600V 16A TO220AB FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 79 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: TO-220AB Full-Pak IGBT Type: NPT Td (on/off) @ 25°C: 25ns/180ns Switching Energy: 156µJ (on), 165µJ (off) Test Condition: 400V, 10A, 50Ohm, 15V Gate Charge: 41 nC Part Status: Obsolete Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 32 A Power - Max: 44 W |
товару немає в наявності |
|
 |
IRGIB10B60KD1P | Виробник : Infineon / IR |
IGBT Transistors 600V Low-Vceon |
товару немає в наявності |