IRGIB6B60KD116P

IRGIB6B60KD116P Infineon Technologies


irgib6b60kd.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 11A 38000mW 3-Pin(3+Tab) TO-220 Full-Pack
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Технічний опис IRGIB6B60KD116P Infineon Technologies

Description: IGBT 600V 11A 38W TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A, Supplier Device Package: TO-220AB Full-Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/215ns, Switching Energy: 110µJ (on), 135µJ (off), Test Condition: 400V, 5A, 100Ohm, 15V, Gate Charge: 18.2 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 22 A, Power - Max: 38 W.

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IRGIB6B60KD116P IRGIB6B60KD116P Виробник : Infineon Technologies irgib6b60kd.pdf Description: IGBT 600V 11A 38W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
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IRGIB6B60KD116P IRGIB6B60KD116P Виробник : Infineon / IR irfh8324pbf-1169361.pdf IGBT Transistors
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