IRGIB6B60KD116P Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT NPT 600V 11A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
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Технічний опис IRGIB6B60KD116P Infineon Technologies
Description: IGBT NPT 600V 11A TO220AB FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A, Supplier Device Package: TO-220AB Full-Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/215ns, Switching Energy: 110µJ (on), 135µJ (off), Test Condition: 400V, 5A, 100Ohm, 15V, Gate Charge: 18.2 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 22 A, Power - Max: 38 W.
Інші пропозиції IRGIB6B60KD116P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRGIB6B60KD116P | Виробник : Infineon / IR |
IGBT Transistors |
товару немає в наявності |
