IRGIB7B60KDPBF Infineon Technologies


irgib7b60kdpbf-1227851.pdf
Виробник: Infineon Technologies
IGBT Transistors 600V Low-Vceon
на замовлення 506 шт:
термін постачання 21-30 дні (днів)
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Технічний опис IRGIB7B60KDPBF Infineon Technologies

Description: IGBT NPT 600V 12A TO220AB FP, Supplier Device Package: TO-220AB Full-Pak, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A, Reverse Recovery Time (trr): 95 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Power - Max: 39 W, Current - Collector Pulsed (Icm): 24 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 12 A, Gate Charge: 29 nC, Test Condition: 400V, 8A, 50Ohm, 15V, Switching Energy: 160µJ (on), 160µJ (off), Td (on/off) @ 25°C: 23ns/140ns, IGBT Type: NPT.

Інші пропозиції IRGIB7B60KDPBF

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IRGIB7B60KDPBF IRGIB7B60KDPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 12A TO220AB FP
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 39 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Gate Charge: 29 nC
Test Condition: 400V, 8A, 50Ohm, 15V
Switching Energy: 160µJ (on), 160µJ (off)
Td (on/off) @ 25°C: 23ns/140ns
IGBT Type: NPT
товару немає в наявності
В кошику  од. на суму  грн.
IRGIB7B60KDPBF fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IGBT NPT 600V 12A TO220AB FP
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 39 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Gate Charge: 29 nC
Test Condition: 400V, 8A, 50Ohm, 15V
Switching Energy: 160µJ (on), 160µJ (off)
Td (on/off) @ 25°C: 23ns/140ns
IGBT Type: NPT
товару немає в наявності
В кошику  од. на суму  грн.