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IRGIB7B60KDPBF

IRGIB7B60KDPBF Infineon Technologies

irgib7b60kdpbf-1227851.pdf
Виробник: Infineon Technologies
IGBT Transistors 600V Low-Vceon
на замовлення 506 шт:
термін постачання 21-30 дні (днів)
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Технічний опис IRGIB7B60KDPBF Infineon Technologies

Description: IGBT NPT 600V 12A TO220AB FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A, Supplier Device Package: TO-220AB Full-Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/140ns, Switching Energy: 160µJ (on), 160µJ (off), Test Condition: 400V, 8A, 50Ohm, 15V, Gate Charge: 29 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 39 W.

Інші пропозиції IRGIB7B60KDPBF

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IRGIB7B60KDPBF IRGIB7B60KDPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 12A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 39 W
товару немає в наявності
В кошику  од. на суму  грн.
IRGIB7B60KDPBF fundamentals-of-power-semiconductors
IRGIB7B60KDPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 12A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 39 W
товару немає в наявності
В кошику  од. на суму  грн.