Технічний опис IRGP6660DPBF Infineon / IR
Description: IGBT 600V 95A TO-247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 48A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 60ns/155ns, Switching Energy: 600µJ (on), 1.3mJ (off), Test Condition: 400V, 48A, 10Ohm, 15V, Gate Charge: 95 nC, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 144 A, Power - Max: 330 W.
Інші пропозиції IRGP6660DPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRGP6660DPBF | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 95A 330000mW 3-Pin(3+Tab) TO-247AC Tube |
товару немає в наявності |
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IRGP6660DPBF | Виробник : Infineon Technologies |
Description: IGBT 600V 95A TO-247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 48A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 60ns/155ns Switching Energy: 600µJ (on), 1.3mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 95 nC Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 144 A Power - Max: 330 W |
товару немає в наявності |