Технічний опис IRGPS40B120UDP
- IGBT Module
- Transistor Type:IGBT
- Package/Case:Super-247
- Current Rating:80A
- Voltage Rating:1200V
Інші пропозиції IRGPS40B120UDP
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRGPS40B120UDP | Виробник : Infineon Technologies | Trans IGBT Chip N-CH 1200V 80A 595000mW 3-Pin(3+Tab) TO-274AA Tube |
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IRGPS40B120UDP | Виробник : Infineon Technologies |
Description: IGBT 1200V 80A 595W SUPER247 Packaging: Bag Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 180 ns Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Supplier Device Package: SUPER-247™ (TO-274AA) IGBT Type: NPT Switching Energy: 1.4mJ (on), 1.65mJ (off) Test Condition: 600V, 40A, 4.7Ohm, 15V Gate Charge: 340 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 595 W |
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IRGPS40B120UDP | Виробник : Infineon / IR | IGBT Transistors 1200V UltraFast 5-40kHz |
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IRGPS40B120UDP | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 595W; SUPER247; single transistor Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 595W Case: SUPER247 Mounting: THT Kind of package: tube Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode |
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