Технічний опис IRGR2B60KDTRPBF Infineon Technologies
Description: IGBT NPT 600V 6.3A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 68 ns, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A, Supplier Device Package: TO-252AA (DPAK), IGBT Type: NPT, Td (on/off) @ 25°C: 11ns/150ns, Switching Energy: 74µJ (on), 39µJ (off), Test Condition: 400V, 2A, 100Ohm, 15V, Gate Charge: 12 nC, Current - Collector (Ic) (Max): 6.3 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 8 A, Power - Max: 35 W.
Інші пропозиції IRGR2B60KDTRPBF
| Фото | Назва | Виробник | Інформація |
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IRGR2B60KDTRPBF | Виробник : Infineon Technologies |
 Description: IGBT NPT 600V 6.3A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A Supplier Device Package: TO-252AA (DPAK) IGBT Type: NPT Td (on/off) @ 25°C: 11ns/150ns Switching Energy: 74µJ (on), 39µJ (off) Test Condition: 400V, 2A, 100Ohm, 15V Gate Charge: 12 nC Current - Collector (Ic) (Max): 6.3 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 8 A Power - Max: 35 W |
товару немає в наявності |
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IRGR2B60KDTRPBF | Виробник : Infineon / IR |
IGBT Transistors 600V IGBT Ultrafast 3.7A 1.95V |
товару немає в наявності |