IRGR2B60KDTRRPBF

IRGR2B60KDTRRPBF Infineon Technologies


irgr2b60kdpbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 6.3A 35000mW 3-Pin(2+Tab) DPAK T/R
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Технічний опис IRGR2B60KDTRRPBF Infineon Technologies

Description: IGBT NPT 600V 6.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 68 ns, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A, Supplier Device Package: TO-252AA (DPAK), IGBT Type: NPT, Td (on/off) @ 25°C: 11ns/150ns, Switching Energy: 74µJ (on), 39µJ (off), Test Condition: 400V, 2A, 100Ohm, 15V, Gate Charge: 12 nC, Current - Collector (Ic) (Max): 6.3 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 8 A, Power - Max: 35 W.

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IRGR2B60KDTRRPBF IRGR2B60KDTRRPBF Виробник : Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT NPT 600V 6.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
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IRGR2B60KDTRRPBF IRGR2B60KDTRRPBF Виробник : Infineon / IR irsds13414_1-2271415.pdf IGBT Transistors 600V Low VCEon Trench IGBT
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