IRGR3B60KD2PBF
Код товару: 104790
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УКТЗЕД: 8541 29 00 10
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Інші пропозиції IRGR3B60KD2PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IRGR3B60KD2PBF | Infineon Technologies |
Description: IGBT NPT 600V 7.8A TO-252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 77 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A Supplier Device Package: TO-252AA (DPAK) IGBT Type: NPT Td (on/off) @ 25°C: 18ns/110ns Switching Energy: 62µJ (on), 39µJ (off) Test Condition: 400V, 3A, 100Ohm, 15V Gate Charge: 13 nC Current - Collector (Ic) (Max): 7.8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 15.6 A Power - Max: 52 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRGR3B60KD2PBF | Infineon / IR |
IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT |
товару немає в наявності |
В кошику од. на суму грн. |
| IRGR3B60KD2PBF |
|
Виробник: Infineon Technologies
Description: IGBT NPT 600V 7.8A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 77 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 62µJ (on), 39µJ (off)
Test Condition: 400V, 3A, 100Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 7.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 15.6 A
Power - Max: 52 W
Description: IGBT NPT 600V 7.8A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 77 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 62µJ (on), 39µJ (off)
Test Condition: 400V, 3A, 100Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 7.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 15.6 A
Power - Max: 52 W
товару немає в наявності
В кошику
од. на суму грн.
| IRGR3B60KD2PBF |
|
Виробник: Infineon / IR
IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT
IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT
товару немає в наявності
В кошику
од. на суму грн.