Технічний опис IRGR4607DPBF Infineon / IR
Description: IGBT 600V 11A 58W DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 48 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A, Supplier Device Package: D-Pak, Td (on/off) @ 25°C: 27ns/120ns, Switching Energy: 140µJ (on), 62µJ (off), Test Condition: 400V, 4A, 100Ohm, 15V, Gate Charge: 9 nC, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 58 W.
Інші пропозиції IRGR4607DPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRGR4607DPBF | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 11A 58000mW 3-Pin(2+Tab) DPAK Tube |
товар відсутній |
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IRGR4607DPBF | Виробник : Infineon Technologies |
Description: IGBT 600V 11A 58W DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 48 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Supplier Device Package: D-Pak Td (on/off) @ 25°C: 27ns/120ns Switching Energy: 140µJ (on), 62µJ (off) Test Condition: 400V, 4A, 100Ohm, 15V Gate Charge: 9 nC Current - Collector (Ic) (Max): 11 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 58 W |
товар відсутній |