Технічний опис IRGS4064DPBF Infineon / IR
Description: IGBT TRENCH 600V 20A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A, Supplier Device Package: D2PAK, IGBT Type: Trench, Td (on/off) @ 25°C: 27ns/79ns, Switching Energy: 29µJ (on), 200µJ (off), Test Condition: 400V, 10A, 22Ohm, 15V, Gate Charge: 32 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 101 W.
Інші пропозиції IRGS4064DPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRGS4064DPBF | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 20A 101000mW 3-Pin(2+Tab) D2PAK Tube |
товару немає в наявності |
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IRGS4064DPBF | Виробник : Infineon Technologies |
Description: IGBT TRENCH 600V 20A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A Supplier Device Package: D2PAK IGBT Type: Trench Td (on/off) @ 25°C: 27ns/79ns Switching Energy: 29µJ (on), 200µJ (off) Test Condition: 400V, 10A, 22Ohm, 15V Gate Charge: 32 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 101 W |
товару немає в наявності |