IRGS6B60KDTRLP
Код товару: 59298
Виробник: IRКорпус: D2PAK
Vces: 600 V
Vce: 1,8 V
Ic 25: 13 A
Ic 100: 7 A
Pd 25: 90 W
td(on)/td(off) 100-150 град: 25/215
товар відсутній
Відгуки про товар
Написати відгук
Інші пропозиції IRGS6B60KDTRLP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IRGS6B60KDTRLP | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 600V 13A 90000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
|
 |
IRGS6B60KDTRLP | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK; single transistor Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: D2PAK Mounting: SMD Kind of package: reel Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 800 шт |
товар відсутній |
|
 |
IRGS6B60KDTRLP | Виробник : Infineon Technologies |
Description: IGBT 600V 13A 90W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: D2PAK IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
товар відсутній |
|
|
|
IRGS6B60KDTRLP | Виробник : Infineon Technologies |
Description: IGBT 600V 13A 90W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: D2PAK IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
товар відсутній |
|
 |
IRGS6B60KDTRLP | Виробник : Infineon / IR |
IGBT Transistors 600V 5A |
товар відсутній |
|
|
|
IRGS6B60KDTRLP | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK; single transistor Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: D2PAK Mounting: SMD Kind of package: reel Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |