IRGSL14C40LPBF Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT 430V 20A TO-262
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector (Ic) (Max): 20 A
Part Status: Obsolete
Gate Charge: 27 nC
Td (on/off) @ 25°C: 900ns/6µs
Supplier Device Package: TO-262
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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Технічний опис IRGSL14C40LPBF Infineon Technologies
Description: IGBT 430V 20A TO-262, Power - Max: 125 W, Voltage - Collector Emitter Breakdown (Max): 430 V, Current - Collector (Ic) (Max): 20 A, Part Status: Obsolete, Gate Charge: 27 nC, Td (on/off) @ 25°C: 900ns/6µs, Supplier Device Package: TO-262, Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A, Input Type: Logic, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Інші пропозиції IRGSL14C40LPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRGSL14C40LPBF | Виробник : Infineon / IR |
IGBT Transistors 430V Low-Vceon |
товару немає в наявності |