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IRGSL4B60KD1PBF

IRGSL4B60KD1PBF International Rectifier

Infineon-SPS03N60C3-DS-v02_02-en.pdf?fileId=db3a3043416e106e0141735112803715 Виробник: International Rectifier
Description: IGBT NPT 600V 11A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
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241+91.53 грн
Мінімальне замовлення: 241
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Технічний опис IRGSL4B60KD1PBF International Rectifier

Description: IGBT NPT 600V 11A TO-262, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 93 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A, Supplier Device Package: TO-262, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/100ns, Switching Energy: 73µJ (on), 47µJ (off), Test Condition: 400V, 4A, 100Ohm, 15V, Gate Charge: 12 nC, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 22 A, Power - Max: 63 W.

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Фото Назва Виробник Інформація Доступність
Ціна
IRGSL4B60KD1PBF IRGSL4B60KD1PBF Виробник : Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGSL4B60KD1PBF IRGSL4B60KD1PBF Виробник : Infineon / IR infineon_05042021_IRGS4B60-2322797.pdf IGBT Transistors 600V Low-Vceon Non Punch Through
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