Технічний опис IRL1104S IR
Description: MOSFET N-CH 40V 104A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2.4W (Ta), 167W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції IRL1104S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRL1104S | Infineon Technologies |
 Description: MOSFET N-CH 40V 104A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube |
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| IRL1104S |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 104A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 40V 104A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.