Технічний опис IRL3102SPBF International Rectifier
Description: MOSFET N-CH 20V 61A D2PAK, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 89W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V, Current - Continuous Drain (Id) @ 25°C: 61A (Tc).
Інші пропозиції IRL3102SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRL3102SPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 61A D2PAKFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
|
IRL3102SPBF | Infineon / IR |
MOSFET 20V 1 N-CH HEXFET 15mOhms 38.7nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRL3102SPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 61A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Description: MOSFET N-CH 20V 61A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| IRL3102SPBF |
![]() |
Виробник: Infineon / IR
MOSFET 20V 1 N-CH HEXFET 15mOhms 38.7nC
MOSFET 20V 1 N-CH HEXFET 15mOhms 38.7nC
товару немає в наявності
В кошику
од. на суму грн.





