Технічний опис IRL3103D1STRL IOR
Description: MOSFET N-CH 30V 64A D2PAK, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції IRL3103D1STRL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IRL3103D1STRL | Infineon Technologies |
Description: MOSFET N-CH 30V 64A D2PAKDrain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. |
| IRL3103D1STRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 64A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 64A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.



