Технічний опис IRL3713SPBF
- MOSFET, N, 30V, 200A, D2-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:30V
- Cont Current Id:200A
- On State Resistance:0.003ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:2.5V
- Case Style:D2-PAK
- Termination Type:SMD
- Alternate Case Style:D2-PAK
- Junction to Case Thermal Resistance A:0.75`C/W
- Max Voltage Vds:30V
- Max Voltage Vgs th:2.5V
- On State resistance @ Vgs = 10V:0.003ohm
- Power Dissipation:200W
- Power Dissipation Pd:200W
- Pulse Current Idm:1040A
- Voltage Vds:30V
- Transistor Case Style:D2-PAK
Інші пропозиції IRL3713SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRL3713SPBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 30V 260A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V |
товару немає в наявності |
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IRL3713SPBF | Виробник : Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 3mOhms 75nC |
товару немає в наявності |