IRL3716PBF

Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 180A TO220AB
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB

Виробник: Infineon / IR
MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC

Виробник: INFINEON
Description: INFINEON - IRL3716PBF - Leistungs-MOSFET, n-Kanal, 20 V, 180 A, 0.004 ohm, TO-220AB, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 20
Dauer-Drainstrom Id: 180
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 210
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.004
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 3
SVHC: No SVHC (27-Jun-2018)