IRL540NSPBF Fairchild/ON Semiconductor
Виробник: Fairchild/ON Semiconductor
N-канальний ПТ, Udss, В = 100, Id = 36 А, Ciss, пФ @ Uds, В = 1800 @ 25, Qg, нКл = 74 @ 5 В, Rds = 44 мОм @ 18 A, 10 В, Ugs(th) = 2 В @ 250 мкА, Р, Вт = 3,8 Вт, Тексп, °C = -55...+175, Тип монт. = smd,... Транзистори Корпус: D2PAK Од. вим: шт
кількість в упаковці: 50 шт
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Технічний опис IRL540NSPBF Fairchild/ON Semiconductor
Description: MOSFET N-CH 100V 36A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V, Power Dissipation (Max): 3.8W (Ta), 140W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.
Інші пропозиції IRL540NSPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IRL540NSPBF | International Rectifier |
 (MFET,N-CH,100V,36A,0.044 OM,TO-252) Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
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IRL540NSPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 36A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRL540NSPBF | Infineon / IR |
MOSFET 100V 1 N-CH HEXFET 44mOhms 49.3nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRL540NSPBF |
|
Виробник: International Rectifier
(MFET,N-CH,100V,36A,0.044 OM,TO-252) Транзистори
(MFET,N-CH,100V,36A,0.044 OM,TO-252) Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRL540NSPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL540NSPBF |
|
Виробник: Infineon / IR
MOSFET 100V 1 N-CH HEXFET 44mOhms 49.3nC
MOSFET 100V 1 N-CH HEXFET 44mOhms 49.3nC
товару немає в наявності
В кошику
од. на суму грн.