на замовлення 60 шт:
термін постачання 5 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 399.33 грн |
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Технічний опис IRL60B216 Infineon
Description: MOSFET N-CH 60V 195A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IRL60B216
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRL60B216 | Infineon Technologies |
 Description: MOSFET N-CH 60V 195A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRL60B216 | Infineon Technologies |
MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl |
товару немає в наявності |
В кошику од. на суму грн. |
| IRL60B216 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRL60B216 |
|
Виробник: Infineon Technologies
MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl
MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl
товару немає в наявності
В кошику
од. на суму грн.