IRL60HS118 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 4000+ | 24.42 грн |
| 8000+ | 21.87 грн |
| 12000+ | 21.03 грн |
| 20000+ | 18.85 грн |
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Технічний опис IRL60HS118 Infineon Technologies
Description: MOSFET N-CH 60V 18.5A 6PQFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V, Power Dissipation (Max): 11.5W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 10µA, Supplier Device Package: 6-PQFN (2x2) (DFN2020), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V.
Інші пропозиції IRL60HS118 за ціною від 21.29 грн до 102.79 грн
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IRL60HS118 | Infineon Technologies |
Description: MOSFET N-CH 60V 18.5A 6PQFN Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V Power Dissipation (Max): 11.5W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 10µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
на замовлення 20918 шт: термін постачання 21-31 дні (днів) |
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IRL60HS118 | Infineon Technologies |
MOSFETs DIFFERENTIATED MOSFETS |
на замовлення 6272 шт: термін постачання 21-30 дні (днів) |
|
| IRL60HS118 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 20918 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 97.53 грн |
| 10+ | 59.18 грн |
| 100+ | 39.15 грн |
| 500+ | 28.68 грн |
| 1000+ | 26.09 грн |
| 2000+ | 23.90 грн |
| IRL60HS118 |
|
Виробник: Infineon Technologies
MOSFETs DIFFERENTIATED MOSFETS
MOSFETs DIFFERENTIATED MOSFETS
на замовлення 6272 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 102.79 грн |
| 10+ | 63.55 грн |
| 100+ | 36.58 грн |
| 500+ | 28.55 грн |
| 1000+ | 25.94 грн |
| 2000+ | 23.82 грн |
| 4000+ | 21.29 грн |